絕緣柵場效應晶體管(IGBT)作為一種復合型器件,集成了mosFET的電壓驅動和高開關頻率及功率管低損耗、大功率的特點,在電機控制、開關電源、變流裝置及許多要求快速、低損耗的領域中有著廣泛的應用。本文對應用于有源電力濾波器的IGBT的特性及其專有EXB84l型驅動器的設計進行討論,并提出一種具有完善保護功能的驅動電路。

　　有源電(dian)力濾(lv)波器(qi)設計中應用4個IGBT作為開關,并(bing)用4個EXB84l組成驅(qu)(qu)動(dong)電(dian)路(lu),其原理如圖l所示。在實驗中,根(gen)據(ju)補(bu)償電(dian)流與指令電(dian)流的關系,用數字(zi)信號處(chu)理器(qi)(DSP)控制PWM引(yin)腳的高低電(dian)平,并(bing)由驅(qu)(qu)動(dong)電(dian)路(lu)控制IGBT的通斷。驅(qu)(qu)動(dong)電(dian)路(lu)同時對過(guo)流故障進行(xing)監測,由DSP采取(qu)控(kong)制信(xin)號、停機(ji)等處理。

圖1 有源電(dian)力(li)濾波器的IGBT驅(qu)動電(dian)路(lu)原理(li)

1 驅動(dong)電路的設計

1.1 驅動電路(lu)電源

　　驅(qu)動電(dian)(dian)(dian)路(lu)(lu)需要4路(lu)(lu)相(xiang)互隔離的直流(liu)電(dian)(dian)(dian)源為(wei)4路(lu)(lu)IGBT驅(qu)動電(dian)(dian)(dian)路(lu)(lu)供電(dian)(dian)(dian),用220V/22V變壓器對4路(lu)(lu)交流(liu)電(dian)(dian)(dian)源分別整(zheng)流(liu),用電(dian)(dian)(dian)容器和(he)78L24型(xing)電(dian)(dian)(dian)壓調整(zheng)器穩壓后輸出(chu)4路(lu)(lu)24V直流(liu)電(dian)(dian)(dian)壓,如圖2所示。

圖2 IGBT驅(qu)動電(dian)路的電(dian)源設計

1.2 柵極電壓(ya)

　　IGBT通(tong)(tong)(tong)常采用柵(zha)極電(dian)壓(ya)驅動(dong)(dong)(dong),它對柵(zha)極驅動(dong)(dong)(dong)電(dian)路有著(zhu)特殊的(de)(de)(de)要(yao)求(qiu)。柵(zha)極驅動(dong)(dong)(dong)電(dian)壓(ya)脈沖(chong)的(de)(de)(de)上升率(lv)和(he)(he)下(xia)降率(lv)要(yao)足夠大(da),導(dao)(dao)通(tong)(tong)(tong)時,前沿很(hen)陡的(de)(de)(de)柵(zha)極電(dian)壓(ya)UGE可以(yi)使(shi)(shi)IGBT快速導(dao)(dao)通(tong)(tong)(tong),并(bing)減(jian)(jian)小導(dao)(dao)通(tong)(tong)(tong)損耗,關斷(duan)(duan)時,其(qi)柵(zha)極驅動(dong)(dong)(dong)電(dian)路要(yao)給IGBT提供一(yi)個(ge)下(xia)降很(hen)陡的(de)(de)(de)關斷(duan)(duan)電(dian)壓(ya),并(bing)在柵(zha)極和(he)(he)發射極之間施加(jia)(jia)一(yi)個(ge)適當的(de)(de)(de)反向(xiang)負偏壓(ya),以(yi)便使(shi)(shi)IGBT快速關斷(duan)(duan),并(bing)減(jian)(jian)小關斷(duan)(duan)損耗。IGBT導(dao)(dao)通(tong)(tong)(tong)后,柵(zha)極的(de)(de)(de)驅動(dong)(dong)(dong)電(dian)壓(ya)和(he)(he)電(dian)流要(yao)有足夠的(de)(de)(de)寬(kuan)度,以(yi)保證IGBT在瞬時過載時未退出飽和(he)(he)區受(shou)到損壞。柵(zha)極驅動(dong)(dong)(dong)電(dian)壓(ya)值為15 V±1.5 V,這個(ge)電(dian)壓(ya)值使(shi)(shi)IGBT*飽和(he)(he)導(dao)(dao)通(tong)(tong)(tong),并(bing)使(shi)(shi)通(tong)(tong)(tong)態損耗減(jian)(jian)至小。施加(jia)(jia)關斷(duan)(duan)負偏壓(ya)可以(yi)抑制C-E間出現du/dt時IGBT的(de)(de)(de)誤(wu)導(dao)(dao)通(tong)(tong)(tong),也可以(yi)減(jian)(jian)少關斷(duan)(duan)損耗。

1.3 門極電阻R1

　　門極(ji)電阻R1的(de)(de)(de)選(xuan)取對通(tong)(tong)態(tai)電壓、開(kai)關(guan)(guan)時(shi)間、開(kai)關(guan)(guan)損耗(hao)及承受(shou)短路(lu)的(de)(de)(de)能力都有不同程度(du)的(de)(de)(de)影(ying)響(xiang)。當門極(ji)電阻增大時(shi),IGBT的(de)(de)(de)開(kai)通(tong)(tong)和(he)關(guan)(guan)斷時(shi)間增加(jia),從而(er)使導通(tong)(tong)和(he)關(guan)(guan)斷損耗(hao)增加(jia)。當門極(ji)電阻減小(xiao)時(shi),則會導致di/dt增加(jia),從而(er)引(yin)起IGBT的(de)(de)(de)誤導通(tong)(tong)。所(suo)以(yi)應根據IGBT的(de)(de)(de)電流容量和(he)電壓額定值(zhi)以(yi)及開(kai)關(guan)(guan)頻率的(de)(de)(de)不同選(xuan)擇R1的(de)(de)(de)阻值(zhi)。

　　Rl的值可以用下式計算：

　　IC為(wei)IGBT的(de)集電(dian)(dian)(dian)(dian)極(ji)(ji)(ji)電(dian)(dian)(dian)(dian)流。如圖(tu)3所示,一(yi)般(ban)R1取十(shi)幾(ji)歐姆(mu)到幾(ji)十(shi)歐姆(mu),R2為(wei)30 Ω。由于(yu)IGBT是(shi)(shi)壓控器(qi)件,當(dang)集-射極(ji)(ji)(ji)間(jian)加高壓時(shi),很(hen)容(rong)易受(shou)外界干(gan)擾,而使柵-射極(ji)(ji)(ji)間(jian)電(dian)(dian)(dian)(dian)壓超過一(yi)定值(zhi)(zhi),引起器(qi)件誤導通,為(wei)了防止(zhi)這種現象的(de)發生,在柵-射極(ji)(ji)(ji)間(jian)并(bing)聯一(yi)電(dian)(dian)(dian)(dian)阻(zu)(zu)器(qi)R6可起到一(yi)定作(zuo)用。一(yi)般(ban)R6阻(zu)(zu)值(zhi)(zhi)是(shi)(shi)R2阻(zu)(zu)值(zhi)(zhi)的(de)l 000~5 000倍,而且應(ying)將它并(bing)聯在柵-射極(ji)(ji)(ji)近處。電(dian)(dian)(dian)(dian)路中的(de)電(dian)(dian)(dian)(dian)容(rong)器(qi)Cl和C2用來抑(yi)制因電(dian)(dian)(dian)(dian)源接(jie)線阻(zu)(zu)抗引起的(de)供電(dian)(dian)(dian)(dian)電(dian)(dian)(dian)(dian)壓變化,而不(bu)是(shi)(shi)用于(yu)電(dian)(dian)(dian)(dian)源濾波。

1.4 EXB841驅動(dong)環節(jie)

　　筆者在實驗(yan)中采用(yong)的是EXB841型IGBT驅動模塊,其高運(yun)行(xing)頻(pin)率(lv)為(wei)40 kHz,輸入(ru)信號(hao)經內部(bu)光(guang)耦隔離,光(guang)隔驅動電流為(wei)10 mA,大延時約為(wei)1 μs。工作溫度范圍(wei)為(wei)-10℃~+85℃,供(gong)電電壓(ya)為(wei)+20 V～+25 V。筆者對EXB841功能進行(xing)了擴展,圖(tu)3為(wei)驅動環節電路(lu)。

圖(tu)3 有源(yuan)電力濾波(bo)器的IGBT驅(qu)動電路圖(tu)

　　EXB841的(de)(de)6引(yin)腳連(lian)接的(de)(de)二(er)極管(guan)(guan)(guan)可(ke)檢(jian)測IGBT的(de)(de)飽和(he)壓降(jiang),用來完成過流保(bao)(bao)(bao)(bao)護(hu)功能,4引(yin)腳的(de)(de)過流保(bao)(bao)(bao)(bao)護(hu)信號(hao)延時(shi)10μs輸出(chu)。當(dang)IGBT有(you)過流時(shi),若UCE大(da)于7.5V,內部過流保(bao)(bao)(bao)(bao)護(hu)電(dian)(dian)路(lu)開始動作(zuo)(zuo),軟關斷(duan)IG-BT。通(tong)常在(zai)(zai)IGBT通(tong)過額定電(dian)(dian)流時(shi)UCE為3.5 V,當(dang)UCE=7.5 V時(shi),IGBT有(you)過流,其值(zhi)約為額定電(dian)(dian)流的(de)(de)3~5倍,但是由于沒有(you)達到保(bao)(bao)(bao)(bao)護(hu)的(de)(de)閾(yu)值(zhi),保(bao)(bao)(bao)(bao)護(hu)電(dian)(dian)路(lu)不起作(zuo)(zuo)用。如果(guo)長時(shi)間(jian)工作(zuo)(zuo)在(zai)(zai)這種狀態,則(ze)會(hui)導致IGBT損壞。為了可(ke)靠地保(bao)(bao)(bao)(bao)護(hu)IGBT,應(ying)該降(jiang)低(di)過流保(bao)(bao)(bao)(bao)護(hu)閾(yu)值(zhi),可(ke)以(yi)在(zai)(zai)D1與(yu)IGBT的(de)(de)集電(dian)(dian)極間(jian)反串一個(ge)穩壓管(guan)(guan)(guan),或多(duo)串幾個(ge)與(yu)D1同規(gui)格的(de)(de)快速恢復二(er)極管(guan)(guan)(guan)。如圖(tu)3通(tong)過反串一個(ge)IN4728型3.3 V穩壓管(guan)(guan)(guan)使保(bao)(bao)(bao)(bao)護(hu)閾(yu)值(zhi)降(jiang)為4.2V。當(dang)檢(jian)測到IGBT過流后,5引(yin)腳變為低(di)電(dian)(dian)平(ping),TPL521型光耦(ou)輸出(chu)低(di)電(dian)(dian)平(ping),通(tong)過與(yu)門控制信號(hao)輸(shu)入,同時使(shi)4輸(shu)入與(yu)非(fei)門輸(shu)出低電平,觸發(fa)功率驅動保(bao)護(hu)中斷,完成相應的保(bao)護(hu)處理(li)。

1.5 控制部(bu)分與驅(qu)動部(bu)分的隔離(li)

　　控制(zhi)電(dian)(dian)(dian)(dian)(dian)路(lu)(lu)(lu)(lu)(lu)為(wei)弱(ruo)電(dian)(dian)(dian)(dian)(dian)部分(fen),極易受到干擾(rao)(rao);驅動(dong)電(dian)(dian)(dian)(dian)(dian)路(lu)(lu)(lu)(lu)(lu)直接與外電(dian)(dian)(dian)(dian)(dian)路(lu)(lu)(lu)(lu)(lu)連接,是一個較強(qiang)的(de)(de)(de)干擾(rao)(rao)源(yuan)(yuan);為(wei)了實現(xian)整個設備的(de)(de)(de)電(dian)(dian)(dian)(dian)(dian)磁(ci)兼容,控制(zhi)電(dian)(dian)(dian)(dian)(dian)路(lu)(lu)(lu)(lu)(lu)部分(fen)必須與驅動(dong)部分(fen)隔離。為(wei)了避免公共電(dian)(dian)(dian)(dian)(dian)源(yuan)(yuan)對控制(zhi)電(dian)(dian)(dian)(dian)(dian)路(lu)(lu)(lu)(lu)(lu)產生干擾(rao)(rao),應對控制(zhi)電(dian)(dian)(dian)(dian)(dian)路(lu)(lu)(lu)(lu)(lu)及驅動(dong)電(dian)(dian)(dian)(dian)(dian)路(lu)(lu)(lu)(lu)(lu)分(fen)別供(gong)電(dian)(dian)(dian)(dian)(dian),EXB84l的(de)(de)(de)電(dian)(dian)(dian)(dian)(dian)源(yuan)(yuan)電(dian)(dian)(dian)(dian)(dian)壓為(wei)+20 V,一般(ban)控制(zhi)電(dian)(dian)(dian)(dian)(dian)路(lu)(lu)(lu)(lu)(lu)的(de)(de)(de)供(gong)電(dian)(dian)(dian)(dian)(dian)電(dian)(dian)(dian)(dian)(dian)壓為(wei)5 V,因此,可以利用圖4所示的(de)(de)(de)DC-DC微功率(lv)模塊進行(xing)電(dian)(dian)(dian)(dian)(dian)源(yuan)(yuan)隔離,采用A2405D型微功率(lv)模塊實現(xian)電(dian)(dian)(dian)(dian)(dian)源(yuan)(yuan)的(de)(de)(de)隔離。

2 IGBT及驅動電路的(de)保護

2.1 IGBT的過電壓保護

　　IGBT集-射極(ji)之間的(de)(de)瞬時(shi)(shi)過(guo)壓會對IGBT造成(cheng)損壞,筆者采用(yong)(yong)箝(qian)位(wei)式吸(xi)(xi)收(shou)電(dian)(dian)(dian)(dian)(dian)(dian)路(lu)對瞬時(shi)(shi)過(guo)電(dian)(dian)(dian)(dian)(dian)(dian)壓進行抑制(zhi)。當IGBT導(dao)通時(shi)(shi),由于(yu)二極(ji)管的(de)(de)作用(yong)(yong),電(dian)(dian)(dian)(dian)(dian)(dian)容器的(de)(de)電(dian)(dian)(dian)(dian)(dian)(dian)荷(he)不會被放(fang)掉,電(dian)(dian)(dian)(dian)(dian)(dian)容器電(dian)(dian)(dian)(dian)(dian)(dian)壓仍為電(dian)(dian)(dian)(dian)(dian)(dian)源(yuan)電(dian)(dian)(dian)(dian)(dian)(dian)壓。IGBT關斷時(shi)(shi),負載電(dian)(dian)(dian)(dian)(dian)(dian)流仍流過(guo)IGBT,直(zhi)到IGBT集-射極(ji)之間電(dian)(dian)(dian)(dian)(dian)(dian)壓達到電(dian)(dian)(dian)(dian)(dian)(dian)源(yuan)電(dian)(dian)(dian)(dian)(dian)(dian)壓,續(xu)流二極(ji)管導(dao)通。應(ying)用(yong)(yong)該(gai)電(dian)(dian)(dian)(dian)(dian)(dian)路(lu),可(ke)以使雜散電(dian)(dian)(dian)(dian)(dian)(dian)感中的(de)(de)能量通過(guo)二極(ji)管轉儲到吸(xi)(xi)收(shou)電(dian)(dian)(dian)(dian)(dian)(dian)容器中,而IGBT的(de)(de)集電(dian)(dian)(dian)(dian)(dian)(dian)極(ji)電(dian)(dian)(dian)(dian)(dian)(dian)位(wei)被箝(qian)位(wei)在電(dian)(dian)(dian)(dian)(dian)(dian)容電(dian)(dian)(dian)(dian)(dian)(dian)壓上,這樣就可(ke)以抑制(zhi)IGBT集電(dian)(dian)(dian)(dian)(dian)(dian)極(ji)的(de)(de)尖峰電(dian)(dian)(dian)(dian)(dian)(dian)壓。吸(xi)(xi)收(shou)電(dian)(dian)(dian)(dian)(dian)(dian)容器的(de)(de)容值可(ke)以按(an)公式(2)選取：

　　式中,L是(shi)(shi)引線電(dian)感;i是(shi)(shi)IGBT關斷(duan)時(shi)的(de)(de)電(dian)流;△U是(shi)(shi)吸收電(dian)容器(qi)上的(de)(de)電(dian)壓過沖(chong)。

　　當吸(xi)(xi)(xi)收(shou)回路中的(de)(de)(de)電(dian)(dian)(dian)(dian)(dian)容(rong)(rong)(rong)器(qi)(qi)電(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)高于直(zhi)流(liu)側(ce)電(dian)(dian)(dian)(dian)(dian)容(rong)(rong)(rong)器(qi)(qi)上(shang)的(de)(de)(de)電(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)時(shi),通過(guo)電(dian)(dian)(dian)(dian)(dian)阻(zu)器(qi)(qi)向直(zhi)流(liu)側(ce)電(dian)(dian)(dian)(dian)(dian)容(rong)(rong)(rong)器(qi)(qi)回送(song)能(neng)量,一(yi)直(zhi)到與直(zhi)流(liu)側(ce)電(dian)(dian)(dian)(dian)(dian)容(rong)(rong)(rong)器(qi)(qi)的(de)(de)(de)電(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)相等。當IGBT關(guan)斷時(shi),線路電(dian)(dian)(dian)(dian)(dian)感在集(ji)電(dian)(dian)(dian)(dian)(dian)極(ji)和發射極(ji)二端產(chan)生很高的(de)(de)(de)尖峰電(dian)(dian)(dian)(dian)(dian)壓(ya)(ya),加上(shang)箝位(wei)式吸(xi)(xi)(xi)收(shou)電(dian)(dian)(dian)(dian)(dian)路以后(hou)(hou),UCE被(bei)(bei)箝位(wei)在電(dian)(dian)(dian)(dian)(dian)容(rong)(rong)(rong)器(qi)(qi)電(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)上(shang),當UCE高于電(dian)(dian)(dian)(dian)(dian)容(rong)(rong)(rong)器(qi)(qi)電(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)時(shi),線路電(dian)(dian)(dian)(dian)(dian)感的(de)(de)(de)能(neng)量被(bei)(bei)轉移到吸(xi)(xi)(xi)收(shou)電(dian)(dian)(dian)(dian)(dian)容(rong)(rong)(rong)器(qi)(qi)上(shang),當尖峰電(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)過(guo)去以后(hou)(hou),吸(xi)(xi)(xi)收(shou)電(dian)(dian)(dian)(dian)(dian)容(rong)(rong)(rong)高于主(zhu)電(dian)(dian)(dian)(dian)(dian)容(rong)(rong)(rong)的(de)(de)(de)那部(bu)分電(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)會由于能(neng)量回進而達到與主(zhu)電(dian)(dian)(dian)(dian)(dian)容(rong)(rong)(rong)相等。這樣就抑制了(le)集(ji)-射極(ji)間的(de)(de)(de)尖峰電(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)。吸(xi)(xi)(xi)收(shou)電(dian)(dian)(dian)(dian)(dian)容(rong)(rong)(rong)越(yue)大(da)(da),吸(xi)(xi)(xi)收(shou)效果越(yue)好。由于吸(xi)(xi)(xi)收(shou)電(dian)(dian)(dian)(dian)(dian)容(rong)(rong)(rong)器(qi)(qi)上(shang)過(guo)沖的(de)(de)(de)能(neng)量大(da)(da)部(bu)分被(bei)(bei)送(song)回到直(zhi)流(liu)側(ce)電(dian)(dian)(dian)(dian)(dian)容(rong)(rong)(rong),所以減(jian)小了(le)電(dian)(dian)(dian)(dian)(dian)阻(zu)器(qi)(qi)的(de)(de)(de)功耗。

2.2 消除IGBT集-柵極之間(jian)的du/dt

　　圖5所示為EXB841與IGBT柵(zha)-射極之(zhi)(zhi)間(jian)的(de)(de)(de)連(lian)接電(dian)(dian)(dian)路(lu)原理圖。當驅動(dong)電(dian)(dian)(dian)路(lu)中的(de)(de)(de)V4導(dao)(dao)通(tong)時,IGBT處(chu)于(yu)(yu)正常導(dao)(dao)通(tong)狀(zhuang)(zhuang)態(tai),當V5導(dao)(dao)通(tong)時,IGBT柵(zha)-射極之(zhi)(zhi)間(jian)通(tong)過穩壓(ya)管(guan)VZ2提供一個(ge)-5V電(dian)(dian)(dian)壓(ya)加在其(qi)兩端,使IGBT關斷(duan),此時V5處(chu)于(yu)(yu)臨界導(dao)(dao)通(tong)狀(zhuang)(zhuang)態(tai),穩壓(ya)管(guan)VZ2處(chu)于(yu)(yu)反(fan)向偏置狀(zhuang)(zhuang)態(tai)。但由于(yu)(yu)集(ji)-柵(zha)極之(zhi)(zhi)間(jian)分(fen)布電(dian)(dian)(dian)容的(de)(de)(de)影響,集(ji)-柵(zha)極之(zhi)(zhi)間(jian)的(de)(de)(de)du/dt增大時,其(qi)通(tong)過分(fen)布電(dian)(dian)(dian)容形成的(de)(de)(de)電(dian)(dian)(dian)流(liu)經過,所以(yi),要克服集(ji)-柵(zha)極之(zhi)(zhi)間(jian)的(de)(de)(de)du/dt,確保穩壓(ya)管(guan)不過壓(ya),避免(mian)IGBT誤(wu)導(dao)(dao)通(tong)。克服du/dt的(de)(de)(de)方法有二(er)種(zhong)：一是驅動(dong)電(dian)(dian)(dian)路(lu)輸(shu)出與IGBT柵(zha)-射極之(zhi)(zhi)間(jian)的(de)(de)(de)連(lian)線(xian)采(cai)用(yong)雙絞屏蔽(bi)電(dian)(dian)(dian)纜,屏蔽(bi)層接地(di),二(er)是采(cai)用(yong)快速吸收電(dian)(dian)(dian)路(lu)吸收過電(dian)(dian)(dian)壓(ya)。

2.3 EXB841的過(guo)流(liu)保護功能(neng)擴展

　　EXB841自(zi)身(shen)具有過(guo)流(liu)保(bao)護功能,其(qi)保(bao)護原理是利用IGBT的(de)集電(dian)極通態飽和壓降與(yu)集電(dian)極電(dian)流(liu)呈(cheng)近似線(xian)性關系。當(dang)IGBT工作在(zai)正(zheng)常狀(zhuang)態時,EXB841的(de)6腳電(dian)位箝制在(zai)8 V,內部保(bao)護不動(dong)(dong)作,當(dang)IGBT因承受(shou)過(guo)流(liu)而退(tui)出(chu)(chu)飽和狀(zhuang)態時,IGBT集-射極間的(de)電(dian)壓上升很多,與(yu)EXB84l的(de)6引(yin)(yin)腳相連的(de)快速二極管截止,EXB841的(de)6引(yin)(yin)腳被懸(xuan)空(kong),內部保(bao)護動(dong)(dong)作,輸(shu)出(chu)(chu)驅動(dong)(dong)電(dian)壓慢慢下降,實現(xian)IGBT的(de)軟關斷。

　　在(zai)(zai)實際(ji)應用中(zhong),僅靠EXB841的(de)(de)6引腳檢測(ce)IG-BT集電(dian)極電(dian)壓(ya)來(lai)實現過流保護并不足以有效(xiao)地保護IGBT,因此有必(bi)要(yao)在(zai)(zai)主電(dian)路中(zhong)加接(jie)霍(huo)爾電(dian)流傳感器來(lai)檢測(ce)電(dian)路中(zhong)的(de)(de)過流,如圖(tu)6所示。過流發生后(hou),檢測(ce)電(dian)路檢測(ce)到(dao)電(dian)流,延時8μs后(hou)信號還存在(zai)(zai)的(de)(de)話。驅動信號以(yi)關斷IGBT。在圖中,霍爾電(dian)(dian)流(liu)(liu)傳感器(qi)如果在主電(dian)(dian)路(lu)中檢(jian)測到過流(liu)(liu)信號,其中的(de)PNP三(san)極(ji)(ji)管將導通,同時,NPN三(san)極(ji)(ji)管被截(jie)止,EXB841的(de)6腳被懸空;當沒(mei)有過流(liu)(liu)信號時,PNP三(san)極(ji)(ji)管不(bu)導通,NPN三(san)極(ji)(ji)管導通,此時電(dian)(dian)路(lu)等(deng)效于擴展(zhan)前的(de)電(dian)(dian)路(lu)。

3 結束語

　　本設計應(ying)用以上電(dian)(dian)(dian)(dian)路對(dui)IGBT進(jin)行(xing)(xing)驅動(dong)和保護(hu)。此驅動(dong)電(dian)(dian)(dian)(dian)路是在典型驅動(dong)電(dian)(dian)(dian)(dian)路的(de)基礎上進(jin)行(xing)(xing)改進(jin)和完善的(de),并且自行(xing)(xing)設計了隔離部分和過電(dian)(dian)(dian)(dian)流保護(hu)擴展部分。此驅動(dong)電(dian)(dian)(dian)(dian)路相對(dui)簡單、實用,對(dui)被驅動(dong)的(de)IGBT有完善的(de)保護(hu)能力,輸出阻(zu)抗(kang)低,具有較(jiao)強的(de)抗(kang)干擾(rao)性能。

　　應用這(zhe)種IGBT模塊的有源濾波器的樣機(ji)通過試驗,證明硬件(jian)能(neng)夠協調配合,控制效果穩定、精確,并且已(yi)經批(pi)量(liang)制板。

ANAPF有源(yuan)電力(li)濾波器

1、ANAPF產品介紹

2、外觀尺寸

3、技(ji)術參數(shu)

4、接線示意

5、諧波電流的(de)估算